BSM50GP120 IGBT Transistor

The BSM50GP120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BSM50GP120 transistor as follows.

BSM50GP120 Transistor Specification

Transistor Code		BSM50GP120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	360W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.55V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		45

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