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BSM50GD120DLC IGBT Transistor

The BSM50GD120DLC is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BSM50GD120DLC transistor as follows.

Circuit diagram symbol of the BSM50GD120DLC transistor

BSM50GD120DLC Transistor Specification

Transistor Code BSM50GD120DLC
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 350W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.6V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 50

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