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BSM50GB60DLC IGBT Transistor

The BSM50GB60DLC is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BSM50GB60DLC transistor as follows.

Circuit diagram symbol of the BSM50GB60DLC transistor

BSM50GB60DLC Transistor Specification

Transistor Code BSM50GB60DLC
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 280W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.45V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 9

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