BSM100GD60DLC IGBT Transistor

The BSM100GD60DLC is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BSM100GD60DLC transistor as follows.

BSM100GD60DLC Transistor Specification

Transistor Code		BSM100GD60DLC
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	430W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		10

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