BSM100GB170DN2 IGBT Transistor

The BSM100GB170DN2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BSM100GB170DN2 transistor as follows.

BSM100GB170DN2 Transistor Specification

Transistor Code		BSM100GB170DN2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1000W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.4V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1300
Rise Time		200

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