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BSM100GB170DLC IGBT Transistor

The BSM100GB170DLC is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BSM100GB170DLC transistor as follows.

Circuit diagram symbol of the BSM100GB170DLC transistor

BSM100GB170DLC Transistor Specification

Transistor Code BSM100GB170DLC
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 960W
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.6V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 100

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