BSM100GB120DN2 IGBT Transistor

The BSM100GB120DN2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BSM100GB120DN2 transistor as follows.

BSM100GB120DN2 Transistor Specification

Transistor Code		BSM100GB120DN2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	800W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1000
Rise Time		80

UXPython is not the creator or an official representative of the BSM100GB120DN2 IGBT transistor. You can download the official BSM100GB120DN2 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

BSM50GD120DN2 IGBT Transistor IKU04N60R IGBT Transistor IXDN50N120AU1 IGBT Transistor IRGR2B60KD IGBT Transistor IXGK120N60A3 IGBT Transistor STGB10NB37LZ IGBT Transistor APT100GT120JR IGBT Transistor APTGT300DA170D3 IGBT Transistor HGTP11N120CN IGBT Transistor IXYR100N120C3 IGBT Transistor MWI75-12A8 IGBT Transistor KM435B IGBT Transistor MIXA101W1200EH IGBT Transistor G10N50C1 IGBT Transistor STGW35NB60SD IGBT Transistor IXGA12N60CD1 IGBT Transistor IXGP20N120 IGBT Transistor IXYH50N120C3 IGBT Transistor IGC04R60DE IGBT Transistor NGB8207N IGBT Transistor