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BSM100GAL120DN2 IGBT Transistor

The BSM100GAL120DN2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BSM100GAL120DN2 transistor as follows.

Circuit diagram symbol of the BSM100GAL120DN2 transistor

BSM100GAL120DN2 Transistor Specification

Transistor Code BSM100GAL120DN2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 800W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 1000
Rise Time 80

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