APTLGF210U120T IGBT Transistor

The APTLGF210U120T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTLGF210U120T transistor as follows.

APTLGF210U120T Transistor Specification

Transistor Code		APTLGF210U120T
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	1437W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	13V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	300A
Operating Junction Temperature (Maximum)		150 oC

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