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APTGT50TDU170P IGBT Transistor

The APTGT50TDU170P is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT50TDU170P transistor as follows.

Circuit diagram symbol of the APTGT50TDU170P transistor

APTGT50TDU170P Transistor Specification

Transistor Code APTGT50TDU170P
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 310W
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 70A
Operating Junction Temperature (Maximum) 150 oC

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