APTGT35X120BTP3 IGBT Transistor

The APTGT35X120BTP3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT35X120BTP3 transistor as follows.

APTGT35X120BTP3 Transistor Specification

Transistor Code		APTGT35X120BTP3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	160W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC

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