APTGT35H120T3 IGBT Transistor

The APTGT35H120T3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT35H120T3 transistor as follows.

APTGT35H120T3 Transistor Specification

Transistor Code		APTGT35H120T3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	208W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	55A
Operating Junction Temperature (Maximum)		150 oC

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