APTGT35DA120D1 IGBT Transistor

The APTGT35DA120D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT35DA120D1 transistor as follows.

APTGT35DA120D1 Transistor Specification

Transistor Code		APTGT35DA120D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	205W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	55A
Operating Junction Temperature (Maximum)		150 oC

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