APTGT30H170T3 IGBT Transistor

The APTGT30H170T3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT30H170T3 transistor as follows.

APTGT30H170T3 Transistor Specification

Transistor Code		APTGT30H170T3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	210W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	45A
Operating Junction Temperature (Maximum)		150 oC

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