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APTGT30DA170D1 IGBT Transistor

The APTGT30DA170D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT30DA170D1 transistor as follows.

Circuit diagram symbol of the APTGT30DA170D1 transistor

APTGT30DA170D1 Transistor Specification

Transistor Code APTGT30DA170D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 210W
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 45A
Operating Junction Temperature (Maximum) 150 oC

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