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APTGT200DA170D3 IGBT Transistor

The APTGT200DA170D3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT200DA170D3 transistor as follows.

Circuit diagram symbol of the APTGT200DA170D3 transistor

APTGT200DA170D3 Transistor Specification

Transistor Code APTGT200DA170D3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 1250W
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 400A
Operating Junction Temperature (Maximum) 150 oC

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