APTGT100X120E3 IGBT Transistor

The APTGT100X120E3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT100X120E3 transistor as follows.

APTGT100X120E3 Transistor Specification

Transistor Code		APTGT100X120E3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	480W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	140A
Operating Junction Temperature (Maximum)		150 oC

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