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APTGS50X170E2 IGBT Transistor

The APTGS50X170E2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGS50X170E2 transistor as follows.

Circuit diagram symbol of the APTGS50X170E2 transistor

APTGS50X170E2 Transistor Specification

Transistor Code APTGS50X170E2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 350W
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC

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