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APTGF90DA60T IGBT Transistor

The APTGF90DA60T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF90DA60T transistor as follows.

Circuit diagram symbol of the APTGF90DA60T transistor

APTGF90DA60T Transistor Specification

Transistor Code APTGF90DA60T
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 416W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 110A
Operating Junction Temperature (Maximum) 150 oC

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