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APTGF90DA60D1 IGBT Transistor

The APTGF90DA60D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF90DA60D1 transistor as follows.

Circuit diagram symbol of the APTGF90DA60D1 transistor

APTGF90DA60D1 Transistor Specification

Transistor Code APTGF90DA60D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 445W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.95V
Collector Current (Maximum) IC 130A
Operating Junction Temperature (Maximum) 150 oC

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