APTGF660U60D4 IGBT Transistor

The APTGF660U60D4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF660U60D4 transistor as follows.

APTGF660U60D4 Transistor Specification

Transistor Code		APTGF660U60D4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	2770W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	825A
Operating Junction Temperature (Maximum)		150 oC

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