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APTGF50X60BTP3 IGBT Transistor

The APTGF50X60BTP3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF50X60BTP3 transistor as follows.

Circuit diagram symbol of the APTGF50X60BTP3 transistor

APTGF50X60BTP3 Transistor Specification

Transistor Code APTGF50X60BTP3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 155W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 35A
Operating Junction Temperature (Maximum) 150 oC

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