APTGF50TDU120P IGBT Transistor

The APTGF50TDU120P is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF50TDU120P transistor as follows.

APTGF50TDU120P Transistor Specification

Transistor Code		APTGF50TDU120P
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	312W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC

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