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APTGF50TDU120P IGBT Transistor

The APTGF50TDU120P is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF50TDU120P transistor as follows.

Circuit diagram symbol of the APTGF50TDU120P transistor

APTGF50TDU120P Transistor Specification

Transistor Code APTGF50TDU120P
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 312W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC

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