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APTGF350SK60 IGBT Transistor

The APTGF350SK60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF350SK60 transistor as follows.

Circuit diagram symbol of the APTGF350SK60 transistor

APTGF350SK60 Transistor Specification

Transistor Code APTGF350SK60
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 1562W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 430A
Operating Junction Temperature (Maximum) 150 oC

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