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APTGF30X60E2 IGBT Transistor

The APTGF30X60E2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF30X60E2 transistor as follows.

Circuit diagram symbol of the APTGF30X60E2 transistor

APTGF30X60E2 Transistor Specification

Transistor Code APTGF30X60E2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 138W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.95V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC

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