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APTGF25DSK120T3 IGBT Transistor

The APTGF25DSK120T3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF25DSK120T3 transistor as follows.

Circuit diagram symbol of the APTGF25DSK120T3 transistor

APTGF25DSK120T3 Transistor Specification

Transistor Code APTGF25DSK120T3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 208W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC

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