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APTGF180DU60T IGBT Transistor

The APTGF180DU60T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF180DU60T transistor as follows.

Circuit diagram symbol of the APTGF180DU60T transistor

APTGF180DU60T Transistor Specification

Transistor Code APTGF180DU60T
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 833W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 220A
Operating Junction Temperature (Maximum) 150 oC

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