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APTGF165DA60D1 IGBT Transistor

The APTGF165DA60D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF165DA60D1 transistor as follows.

Circuit diagram symbol of the APTGF165DA60D1 transistor

APTGF165DA60D1 Transistor Specification

Transistor Code APTGF165DA60D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 730W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 230A
Operating Junction Temperature (Maximum) 150 oC

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