APTGF125X60E3 IGBT Transistor

The APTGF125X60E3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF125X60E3 transistor as follows.

APTGF125X60E3 Transistor Specification

Transistor Code		APTGF125X60E3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	570W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	180A
Operating Junction Temperature (Maximum)		150 oC

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