APTGF10X120E2 IGBT Transistor

The APTGF10X120E2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGF10X120E2 transistor as follows.

APTGF10X120E2 Transistor Specification

Transistor Code		APTGF10X120E2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	80W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		150 oC

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