APT80GP60JDQ3 IGBT Transistor

The APT80GP60JDQ3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT80GP60JDQ3 transistor as follows.

APT80GP60JDQ3 Transistor Specification

Transistor Code		APT80GP60JDQ3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	462W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	68A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		735
Rise Time		40

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