APT80GP60B2 IGBT Transistor

The APT80GP60B2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT80GP60B2 transistor as follows.

APT80GP60B2 Transistor Specification

Transistor Code		APT80GP60B2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TMAX
Collector Power Dissipation (Maximum)	Pc	1041W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC

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