APT80GA90LD40 IGBT Transistor

The APT80GA90LD40 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT80GA90LD40 transistor as follows.

APT80GA90LD40 Transistor Specification

Transistor Code		APT80GA90LD40
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	625W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		411
Rise Time		29

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