APT75GP120JDQ3 IGBT Transistor

The APT75GP120JDQ3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT75GP120JDQ3 transistor as follows.

APT75GP120JDQ3 Transistor Specification

Transistor Code		APT75GP120JDQ3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	543W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	57A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		460
Rise Time		40

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