APT75GN60BG IGBT Transistor

The APT75GN60BG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT75GN60BG transistor as follows.

APT75GN60BG Transistor Specification

Transistor Code		APT75GN60BG
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	536W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.87V
Collector Current (Maximum)	IC	93A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		370
Rise Time		48

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