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APT75GN60BDQ2G IGBT Transistor

The APT75GN60BDQ2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT75GN60BDQ2G transistor as follows.

Circuit diagram symbol of the APT75GN60BDQ2G transistor

APT75GN60BDQ2G Transistor Specification

Transistor Code APT75GN60BDQ2G
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 536W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.85V
Collector Current (Maximum) IC 155A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 370
Rise Time 48

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