APT68GA60LD40 IGBT Transistor

The APT68GA60LD40 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT68GA60LD40 transistor as follows.

APT68GA60LD40 Transistor Specification

Transistor Code		APT68GA60LD40
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	520W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	68A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		526
Rise Time		27

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