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APT65GP60L2DQ2G IGBT Transistor

The APT65GP60L2DQ2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT65GP60L2DQ2G transistor as follows.

Circuit diagram symbol of the APT65GP60L2DQ2G transistor

APT65GP60L2DQ2G Transistor Specification

Transistor Code APT65GP60L2DQ2G
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector Power Dissipation (Maximum) Pc 833W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 96A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 580
Rise Time 55

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