APT65GP60JDQ2 IGBT Transistor

The APT65GP60JDQ2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT65GP60JDQ2 transistor as follows.

APT65GP60JDQ2 Transistor Specification

Transistor Code		APT65GP60JDQ2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	431W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	130A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		580
Rise Time		55

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