APT64GA90B2D30 IGBT Transistor

The APT64GA90B2D30 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT64GA90B2D30 transistor as follows.

APT64GA90B2D30 Transistor Specification

Transistor Code		APT64GA90B2D30
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	64A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		318
Rise Time		26

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