APT60GT60JRDQ3 IGBT Transistor

The APT60GT60JRDQ3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT60GT60JRDQ3 transistor as follows.

APT60GT60JRDQ3 Transistor Specification

Transistor Code		APT60GT60JRDQ3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	379W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	48A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		390
Rise Time		34

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