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APT60GT60JRD IGBT Transistor

The APT60GT60JRD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT60GT60JRD transistor as follows.

Circuit diagram symbol of the APT60GT60JRD transistor

APT60GT60JRD Transistor Specification

Transistor Code APT60GT60JRD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 375W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 90A
Operating Junction Temperature (Maximum) 150 oC

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