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APT60GT60BR IGBT Transistor

The APT60GT60BR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT60GT60BR transistor as follows.

Circuit diagram symbol of the APT60GT60BR transistor

APT60GT60BR Transistor Specification

Transistor Code APT60GT60BR
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 500W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 116A
Operating Junction Temperature (Maximum) 150 oC

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