APT60GF120JRD IGBT Transistor

The APT60GF120JRD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT60GF120JRD transistor as follows.

APT60GF120JRD Transistor Specification

Transistor Code		APT60GF120JRD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	520W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC

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