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APT54GA60SD30 IGBT Transistor

The APT54GA60SD30 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT54GA60SD30 transistor as follows.

Circuit diagram symbol of the APT54GA60SD30 transistor

APT54GA60SD30 Transistor Specification

Transistor Code APT54GA60SD30
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268AB
Collector Power Dissipation (Maximum) Pc 416W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 54A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 350
Rise Time 20

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