APT54GA60BD30 IGBT Transistor

The APT54GA60BD30 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT54GA60BD30 transistor as follows.

APT54GA60BD30 Transistor Specification

Transistor Code		APT54GA60BD30
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	416W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	54A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		350
Rise Time		20

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