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APT50GT60BRDLG IGBT Transistor

The APT50GT60BRDLG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GT60BRDLG transistor as follows.

Circuit diagram symbol of the APT50GT60BRDLG transistor

APT50GT60BRDLG Transistor Specification

Transistor Code APT50GT60BRDLG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 446W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 52A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 250
Rise Time 32

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