APT50GT120LRDQ2G IGBT Transistor

The APT50GT120LRDQ2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GT120LRDQ2G transistor as follows.

APT50GT120LRDQ2G Transistor Specification

Transistor Code		APT50GT120LRDQ2G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	694W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3.7V
Collector Current (Maximum)	IC	106A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		250
Rise Time		50

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