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APT50GT120B2RG IGBT Transistor

The APT50GT120B2RG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GT120B2RG transistor as follows.

Circuit diagram symbol of the APT50GT120B2RG transistor

APT50GT120B2RG Transistor Specification

Transistor Code APT50GT120B2RG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247_TO264
Collector Power Dissipation (Maximum) Pc 625W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 4V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 500
Rise Time 53

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