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APT50GT120B2RDLG IGBT Transistor

The APT50GT120B2RDLG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GT120B2RDLG transistor as follows.

Circuit diagram symbol of the APT50GT120B2RDLG transistor

APT50GT120B2RDLG Transistor Specification

Transistor Code APT50GT120B2RDLG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 694W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 3.7V
Collector Current (Maximum) IC 106A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 250
Rise Time 50

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